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IL256AT 데이터시트(PDF) 2 Page - Vishay Siliconix |
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IL256AT 데이터시트(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com 2 Document Number 83620 Rev. 1.4, 22-Apr-04 VISHAY IL256AT Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 30 V Emitter-collector breakdown voltage BVECO 5.0 V Collector-base breakdown voltage BVCBO 70 V Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Symbol Value Unit Total package dissipation (LED + detector) Ptot 240 mW Derate linearly from 25 °C 3.2 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = ± 10 mA VF 1.2 1.5 V Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 1.0 mA BVCEO 30 50 V Emitter-collector breakdown voltage IE = 100 µABVECO 5.0 10 V Collector-base breakdown voltage IC = 100 µABVCBO 70 90 V Collector-emitter leakage current VCE = 10 V ICEO 5.0 50 nA Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage, collector- emitter IF = ± 16 mA, IC = 2.0 mA VCEsat 0.4 V Isolation voltage, input to output VISO 3000 VRMS Parameter Test condition Symbol Min Typ. Max Unit DC Current Transfer Ratio IF = ± 10 mA, VCE = 5.0 V CTRDC 20 % Symmetry (CTR at + 10 mA)/ (CTR at -10 mA) 0.5 1.0 2.0 |
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