2SA1261 datasheet(1/2 Pages) ISC

부품명	2SA1261

상세설명	isc Silicon PNP Power Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

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isc Silicon PNP Power Transistor

2SA1261

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= -0.6V(Max.)@IC= -5A

·

Fast Switching Speed

·

Complement to Type 2SC3157

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Developed for high-voltage high-speed switching, and is

ideal for use as a driver in devices such as switching reg-

lators, DC/DC converters, and high frequency power am-

plifiers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-7.0

V

IC

Collector Current-Continuous

-10

A

ICM

Collector Current-Peak

-20

A

IB

Base Current-Continuous

-3.5

A

PC

Collector Power Dissipation

@ Ta=25℃

1.5

W

Collector Power Dissipation

@ TC=25℃

60

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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