2000 Feb 04

3

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF246B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor section unless otherwise specified

drain-source voltage

−

65

V

gate-source voltage

−±20

V

drain current (DC)

−

8A

130

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

mounting base

total device; both sections equally

loaded

1.35

K/W

thermal resistance from mounting base

to heatsink

total device; both sections equally

loaded

0.25

K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

1

10

110

ID

(A)

VDS (V)

(1)

50

MRA932

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

0

40

80

160

160

120

40

0

80

MGR738

120

Th (°C)

Ptot

(W)

(2)

(1)