BLF404 datasheet(4/16 Pages) PHILIPS

4 / 16 page

1998 Jan 29

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF404

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage VGS = 0; ID = 5 mA

−−

VGS(th)

gate-source threshold voltage

ID = 50 mA; VDS =10V

−

4.5

IDSS

drain-source leakage current

VGS = 0; VDS = 12.5 V

−−

0.5

IGSS

gate-source leakage current

VDS = 0; VGS = ±20 V

−−

µA

IDSX

on-state drain current

VGS = 15 V; VDS =10V

−

2.3

−

RDSon

drain-source on-state resistance ID = 0.7 A; VGS =15V

−

1.8

2.7

Ω

gfs

forward transconductance

ID = 0.7 A; VDS = 10 V

200

270

−

Cis

input capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz

−

Cos

output capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz

−

Crs

feedback capacitance

VGS = 0; VDS = 12.5 V; f = 1 MHz

−

Fig.3

Temperature coefficient of gate-source

voltage as a function of drain current;

typical values.

VDS =10V.

handbook, halfpage

T.C.

(mV/K)

−5

102

103

104

MRA254

ID(mA)

Fig.4

Drain current as a function of gate-source

voltage; typical values.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

MRA249

(A)

VGS (V)

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