BLF521 datasheet(6/14 Pages) PHILIPS

6 / 14 page

November 1992

Philips Semiconductors

Product speciﬁcation

UHF power MOS transistor

BLF521

APPLICATION INFORMATION FOR CLASS-B OPERATION

Tamb =25 °C; RGS = 274 Ω, unless otherwise speciﬁed.

RF performance in a common source class-B test circuit.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

CW, class-B

500

12.5

> 10

typ. 13

> 50

typ. 60

Ruggedness in class-B operation

The BLF521 is capable of withstanding a load mismatch

corresponding to VSWR = 50:1 through all phases under

the following conditions:

VDS = 15.5 V; f = 500 MHz at rated output power.

Fig.9

Power gain and efficiency as functions of

load power, typical values.

Class-B operation; VDS = 12.5 V; IDQ = 10 mA;

ZL = 9.5 + j12.8; f = 500 MHz.

handbook, halfpage

0.5

1.5

PL (W)

(dB)

2.5

3.5

100

MDA480

ηD

(%)

ηD

Fig.10 Load power as a function of input power,

typical values.

Class-B operation; VDS = 12.5 V; IDQ = 20 mA;

ZL = 9.5 + j12.8; f = 175 MHz.

handbook, halfpage

0.2

1.0

0.4

0.6

0.8

MDA479

(W)

PIN (W)

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