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BLT53 데이터시트(PDF) 6 Page - NXP Semiconductors |
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BLT53 데이터시트(HTML) 6 Page - NXP Semiconductors |
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6 / 11 page ![]() May 1991 6 Philips Semiconductors Product specification UHF power transistor BLT53 APPLICATION INFORMATION RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) ηc (%) c.w. class-B 470 7.5 8 > 6 typ. 6.8 > 60 typ. 65 Fig.7 Gain and efficiency as functions of load power, typical values. Class-B operation; VCE = 7.5 V; f = 470 MHz. handbook, halfpage 048 Gp (dB) Gp PL (W) 12 10 0 2 MCD197 8 6 4 η (%) η 70 20 30 60 50 40 Fig.8 Load power as a function of drive power, typical values. Class-B operation; VCE = 7.5 V; f = 470 MHz. handbook, halfpage 0 12 8 4 0 12 PL (W) 4 MCD198 3 PD (W) Ruggedness in class-B operation The BLT53 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases at rated output power, up to a supply voltage of 9 V, and f = 470 MHz. |
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