AM03120-01 detection module

P a g e | 1

16/09/2021

Engineering samples are manufactured for purposes of research and development. Values of parameters mentioned in the datasheet are for guidance

only and may not be used as guaranteed values.

VIGO System S.A. reserves the right to change these specifications at any time without notification.

www.vigo.com.pl

AM03120-01 ENGINEERING SAMPLE

MWIR InAsSb detection module

AM03120-01 is an ”all-in-one” uncooled IR detection module in a compact TO8 package.

Photovoltaic mutiple junction InAsSb detector element is directly integrated with low-noise

preamplifier. Amplified analog output may be connected directly to the measurement

equipment. Through-hole mounting is possible. The detection module is supplied with 3°

wedged zinc selenide anti-reflection coated window (wZnSeAR) which prevents unwanted

interference effects.

The final product can be offered as an OEM component (only PCB with detector element),

mounted on a TO8 sumbount or mounted and sealed in a TO8 package with a window.

Spectral response (Ta = 20°C)

Exemplary spectral detectivity, the spectral response of delivered devices may

differ.

Exemplary spectral responsivity, the spectral response of delivered devices

may differ.

Specification (Ta = 20°C, RL = 1 MΩ, f0 = 500 kHz)*

Parameter

Min

Typ

Max

Cut-on wavelength λcut-on (10%), µm

-

2.3

-

Peak wavelength λpeak, µm

4.4

4.6

4.7

Cut-off wavelength λcut-off (10%), µm

-

5.9

-

Detectivity D*(λpeak), cm·Hz1/2/W

3.4×108

5.5×108

-

Output noise voltage density vn, nV/Hz1/2

-

100

130

Noise equivalent power NEP(λpeak), nW/Hz1/2

-

0.18

0.30

Voltage responsivity Rv(λpeak), V/W

-

559

-

Low cut-off frequency flo, Hz

-

DC

-

High cut-off frequency fhi, Hz

2M

-

-

Transimpedance Ki, V/A

4.65k

4.70k

4.75k

Output impedance Rout, Ω

49.5

50.0

50.5

Output voltage Vout, V

0

0

-

-

2.50 (RL = 1 MΩ)

1.25 (RL = 50 Ω)

Output voltage offset Voff, mV

–10

-

+10

Power supply voltage Vsup, V

-

±3

-

Power supply current Isup, mA

-

-

20

Power consumption, mW

-

-

120

Active element material

epitaxial InAsSb heterostructure

Active area A, mm×mm

1×1

Package

TO8

Acceptance angle Φ

~48°

Window

wZnSeAR

Features



Compact and miniaturized



Low power consumption



Immune to EMI



OEM version available



Convenient to use



Cost effective solution



Quantity discounted price

Applications



MWIR spectroscopy (gas,

liquids and solids analysis)



Temperature measurement



Laser metrology



Monitoring of industrial and

laboratory processes



Laser power monitoring

and control

Dedicated accessories



Evaluation board

* Unless otherwise stated.

1E+07

1E+08

1E+09

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Wavelength, µm

0E+00

1E+02

2E+02

3E+02

4E+02

5E+02

6E+02

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

Wavelength, µm