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P25Q64U 데이터시트(PDF) 40 Page - Puya Semiconductor Co., Ltd.

부품명 P25Q64U
상세설명  Ultra Low Power, 64M-bit Serial Multi I/O Flash Memory Datasheet
PDF  97 Pages
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제조업체  PUYA [Puya Semiconductor Co., Ltd.]
홈페이지  http://www.puyasemi.com/index_en.html
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P25Q64U Datasheet
Puya Semiconductor
Page 40 of 97
10.13 Dual Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial NOR Flash in read mode. The address is latched
on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of
SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically
increased to the next higher address after each byte data is shifted out, so the whole memory can be read out
at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached.
Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing DREAD instruction is: CS# goes low → sending DREAD instruction → 3-byte
address on SI → 8-bit dummy cycle → data out interleave on SIO1 & SIO0 → to end DREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 10-13 Dual Read Mode Sequence (Command 3B)
Command
0
1
2
3
4
5
6
7
3BH
CS#
SCLK
SI
SO
High - Z
8
9 10
28 29 30 31
3
2
1
0
23
22 21
24- bit address
MSB
5
3
1
7
5
3
1
Data Out1
7
Data Out2
CS#
SCLK
SI
SO
MSB
Dummy Clocks
4
2
0
6
4
2
0
6
6
7
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47



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