NCE30P16Q datasheet(1/6 Pages) NCEPOWER

부품명	NCE30P16Q

상세설명	NCE P-Channel Enhancement Mode Power MOSFET

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제조업체	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

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Wuxi NCE Power Co., Ltd

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V1.0

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NCE30P16Q

Pb Free Product

http://www.ncepower.com

NCE P-Channel Enhancement Mode Power MOSFET

Description

The NCE30P16Q uses advanced trench technology to provide

excellent RDS(ON), low gate charge . This device is suitable for

use as a load switch or in PWM applications.

General Features

●

VDS = -30V,ID = -16A

RDS(ON) < 30mΩ @ VGS=-4.5V

RDS(ON) < 18mΩ @ VGS=-10V

●

High Power and current handing capability

●

Lead free product is acquired

●

Surface mount package

Application

●

PWM applications

●

Load switch

●

Power management

Schematic diagram

Marking and pin assignment

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE30P16Q

DFN3.3X3.3

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

-16

A

Drain Current-Continuous(TC=100 )

℃

ID (100℃)

-11.3

A

Drain Current-Pulsed

(Note 1)

IDM

-64

A

Maximum Power Dissipation

PD

30

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

RθJC

4.2

/W

℃

유사한 부품 번호 - NCE30P16Q

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NCE30P16Q 데이터시트(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

NCE30P16Q 데이터시트(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

유사한 부품 번호 - NCE30P16Q

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