Limiting values in accordance with the Maximum system(IEC 134)

2/4

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HAOPIN MICROELECTRONICS CO.,LTD.

TM

HPM

SCRs

CR3AM

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

V

DRM

I

T(RMS)

I

T(AV)

It

2

I

I

DRM

RRM

I

GM

V

RGM

P

GM

T

stg

T

j

P

G(AV)

Repetitive peak off-state

Tj=-40 to 110

,sine wave

50 to 60 Hz,gate open

Voltages

RMS on-state current

Average On-state current

Circuit Fusing considerations

Peak repetitive forward or

reverse blocking current

Forward peak gate current

Peak Reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

Temperature range

V

V

A

A

A

W

W

180 conduction angles

o

180 conduction angles

o

TC=93

TC=93

Tj=25

Tj=110

t=8.3ms

V

=Rated V

or V

;

R

=1000 Ohms

AK

DRM

RRM

GK

Tc=93

,Pulse Width<=1.0

s

Tc=93

,Pulse Width<=1.0

s

Tc=93

,Pulse Width<=1.0

s

Tc=93

,t=8.3ms

-

-

-

-

-

-

-

-

-

-

-

-

-

-40

-40

110

T =25

unless otherwise stated

J

Static characteristics

I

GT

Dynamic Characteristics

D/dt

V

di/dt

Gate trigger current

Critical rate of rise of

Off-state voltage

Critical Rate-of-Rise of

Off State Current

VAK=7.0Vdc,RL=100 Ohms

UNIT

MAX

TYP

-

-

-

50

10

-

Tj=110

lpk=20A;PW=10

sec;

diG/dt=1A/

sec,lgt=20mA

200

500

-

V

TM

Peak Forward

on-state voltage

ITM=4A

Peak

TC=-40

-

-

2.0

5.0

-

-

V

mA

A

A

AS

2

4

2.55

600

V

GD

V

GT

Non-trigger voltage

Gate trigger voltage

VAK=7.0Vdc,RL=100 Ohms

VAK=12Vdc,RL=100 Ohms,Tj=110

0.2

-

-

-

-

V

1

V

200

-

-

-

0.2

6

0.5

0.1

150

V/ s

-

2.6

10

A

V =7.0Vdc,lnitiating Current=20mA

gate open

AK

I

H

Holding current

s

A/