1997 Oct 27

2

Philips Semiconductors

Product specification

UHF push-pull power transistor

BLV950

FEATURES

• Internal input and output matching for easy matching,

high gain and efficiency

• Poly-silicon emitter ballasting resistors for an optimum

temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Base station transmitters in the 800 to 960 MHz range.

DESCRIPTION

Two NPN silicon planar epitaxial transistors in push-pull

configuration, intended for linear common emitter

class-AB operation. The transistors are encapsulated in a

4-lead SOT262A2 flange package with 2 ceramic caps.

The flange provides the common emitter connection for

both transistors.

PINNING - SOT262A2

PIN

SYMBOL

DESCRIPTION

1

c1

collector 1

2

c2

collector 2

3

b1

base 1

4

b2

base 2

5

e

common emitter; connected

to flange

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM031

c1

b1

b2

c2

e

12

34

Top view

55

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

CW, class-AB

900

26

150

≥8

≥45

−

960

26

150

≥7.5

≥45

−

2-tone, class-AB

900

26

150 (PEP)

≥8.5

≥35

≤−30

960

26

150 (PEP)

≥8

≥35

≤−30

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.