2004 Dec 14

3

NXP Semiconductors

Product data sheet

NPN high-voltage transistors

BST39; BST40

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BST39

−

400

V

BST40

−

300

V

VCEO

collector-emitter voltage

open base

BST39

−

350

V

BST40

−

250

V

VEBO

emitter-base voltage

open collector

−

5

V

IC

collector current (DC)

−

100

mA

ICM

peak collector current

−

200

mA

IBM

peak base current

−

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

1.3

W

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

96

K/W

Rth(j-s)

thermal resistance from junction to soldering point

16

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0 A; VCB = 300 V

−

20

nA

IEBO

emitter-base cut-off current

IC = 0 A; VEB = 5 V

−

100

nA

hFE

DC current gain

IC = 20 mA; VCE = 10 V

40

−

VCEsat

collector-emitter saturation voltage IC = 50 mA; IB = 4 mA

−

500

mV

Cc

collector capacitance

IE = ie = 0 A; VCB = 10 V; f = 1 MHz

−

2

pF

fT

transition frequency

IC = 10 mA; VCE = 10 V; f = 100 MHz 70

−

MHz