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FKBA4086 데이터시트(PDF) 1 Page - FETek Technology Corp. |
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FKBA4086 데이터시트(HTML) 1 Page - FETek Technology Corp. |
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1 / 4 page ![]() FETek Technology Corp. Data and specifications subject to change without notice. www.fetek.com.tw Ver : B FKBA4086 N-Ch 40V Fast Switching MOSFETs 11 Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 220 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 140 A IDM Pulsed Drain Current2 400 A EAS Single Pulse Avalanche Energy3 562 mJ IAS Avalanche Current 106 A PD@TC=25℃ Total Power Dissipation4 89 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 1.4 ℃/W BVDSS RDSON ID 40V 1m Ω 220A Applications Absolute Maximum Ratings Thermal Data PRPAK5X6 Pin Configuration Product Summary Features ⚫ SMPS Synchronous Rectification ⚫ DC/DC Converters ⚫ Or-ing ⚫ Advanced Trench MOS Technology ⚫ 100% EAS Guaranteed ⚫ High Current Capability ⚫ Green Device Available |
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