August 1986

6

Philips Semiconductors

Product specification

HF power transistor

BLW97

APPLICATION INFORMATION

R.F. performance in s.s.b. class-AB operation (linear power amplifier).

Note

1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones.

Relative to the according peak envelope powers these figures should be increased by 6 dB.

OUTPUT POWER

WdB

%

A

dB

dB

A

175 (PEP)

>

11,5

>

40

<

7,8

<−30

<−30

0,1

typ. 13,0

typ. 50

typ. 6,3

typ.

−34

typ.

−38

Fig.8 Class-AB (s.s.b.) test circuit.

handbook, full pagewidth

50

Ω

MGP709

L2

L1

R1

R2

C5

L5

L4

T.U.T.

C6

L3

C11

C14

C10

C2

C1

C4

C7

C8

C9

R3

C3

VCC

VBB

C12

C13

50

Ω