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BLY87C 데이터시트(PDF) 8 Page - NXP Semiconductors |
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BLY87C 데이터시트(HTML) 8 Page - NXP Semiconductors |
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8 / 11 page ![]() August 1986 8 Philips Semiconductors Product specification VHF power transistor BLY87C Fig.9 Typical values; f = 175 MHz; VCE = 13,5 V; − − − VCE = 12,5 V. handbook, halfpage 0 0 0.5 1.5 15 5 10 MGP826 1 PL (W) PS (W) Th = 25 °C Th = 70 °C Fig.10 Typical values; f = 175 MHz; VCE = 13,5 V; − − − VCE = 12,5 V. handbook, halfpage 2.5 12.5 30 10 0 20 MGP827 6.5 4.5 8.5 10.5 Gp (dB) 80 40 20 60 η (%) PL (W) Th = 25 °C Th = 25 °C 70 °C 70 °C η Gp Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th =70 °C; Rth mb-h = 0,45 K/W; VCEnom = 13,5 V or 12,5 V; PS =PSnom at VCEnom and VSWR = 1. handbook, halfpage 1 1.1 1.3 10 7 MGP828 1.2 10 20 50 8 PLnom (W) VSWR = 1 9 VCE VCEnom 6 VSWR = PS PSnom Note to Fig.11: The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio. |
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