BSH101 datasheet(8/12 Pages) PHILIPS

부품명	BSH101

상세설명	N-channel enhancement mode MOS transistor

PDF	12 Pages

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제조업체	PHILIPS [NXP Semiconductors]

홈페이지	http://www.nxp.com

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8 / 12 page

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

VGSth at VDS =VGS; ID = 1 mA.

GSth at Tj

GSth at 25 ° C

--------------------------------------

handbook, halfpage

−65

185

0.4

MGM199

0.8

1.2

−15

135

Tj (°C)

Fig.13 Temperature coefficient of drain-source

on-resistance as a function of junction

temperature; typical values.

(1) RDSon at VGS = 10 V; ID = 350 mA.

(2) RDSon at VGS = 4.5 V; ID = 170 mA.

DSon at Tj

DSon at 25 ° C

-----------------------------------------

handbook, halfpage

−65

185

2.0

0.4

MGM200

0.8

1.2

1.6

−15

135

Tj (°C)

(2)

(1)

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