Rating and Characteristics Curves (CDBKA20120L-HF)

Comchip Technology CO., LTD.

Page 2

Low VF Schottky Rectifiers

Parameter

Conditions

Min

Max

Unit

V

V

Typ

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

VBR

VF

IR

Breakdown voltage per diode

Reverse current per diode

Instantaneous forward voltage per diode

µA

IR = 0.5mA, TJ = 25°C

IF = 1A, TJ = 25°C

IF = 5A, TJ = 25°C

IF = 10A, TJ = 25°C

IF = 1A, TJ = 125°C

IF = 5A, TJ = 125°C

µA

mA

VR = 120V, TJ = 125°C

VR = 120V, TJ = 25°C

VR = 96V, TJ = 25°C

120

0.48

0.64

0.76

0.80

0.41

0.56

2

2.6

50

Fig.1 - Forward Current Derating Curve

Case Temperature, TC (°C)

0

2.5

5

7.5

12.5

0

25

150

Fig.2 - Typical Junction Capacitance

50

75

100

125

Per diode

1

10

100

1000

1

10

10

100

Reverse Bias Voltage, VR (V)

Per diode

Forward Voltage, VF (V)

1

0.01

0.1

10

0

0.4

0.8

Fig.4 - Typical Forward Capacitance

1.0

1

0.01

100

Fig.3 - Typical Reverse Characteristics

Percent of Rated Peak Reverse Voltage, (%)

0.0001

10

20

70

30

60

80

100

90

10

0.2

0.6

0.1

Per diode

TJ=25°C

TJ=75°C

TJ=150°C

TJ=125°C

50

40

Per diode

TJ=150°C

TJ=125°C

TJ=75°C

TJ=25°C

0.001

QW-JB112

REV:B