DATA SHEET

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Document No. P15273EJ1V0DS00 (1st edition)

Date Published January 2001 NS CP(K)

Printed in Japan

©

2001

NPN SILICON RF TWIN TRANSISTOR

µµµµPA892TD

NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)

IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES

• Ideal for low noise

⋅ high-gain amplification and oscillation at 3 GHz or over

NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz

• Maximum available power gain: MAG = 12.5 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• High fT: fT = 21.0 GHz TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz

• 6-pin lead-less minimold package

• Built-in 2 transistors (2

× 2SC5668)

BUILT-IN TRANSISTORS

Q1, Q2

3-pin thin-type ultra super minimold part No.

2SC5668

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

µPA892TD

50 pcs (Non reel)

• 8 mm wide embossed taping

µPA892TD-T3

10 kpcs/reel

• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

Because this product uses high-frequency technology, avoid excessive static electricity, etc.