NTJS4151P datasheet(2/5 Pages) ONSEMI

2 / 5 page

NTJS4151P

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

−12

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = −16 V,

VDS = 0 V

TJ = 25°C

−1.0

TJ = 85°C

−5.0

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±4.5 V

±1.5

VDS = 0 V, VGS = ±12 V

±10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.40

−1.2

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ

4.0

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −3.3 A

VGS = −2.5 V, ID = −2.3 A

VGS = −1.8 V, ID = −1.0 A

180

205

Forward Transconductance

gFS

VGS = −10 V, ID = −3.3 A

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −10 V

850

Output Capacitance

COSS

160

Reverse Transfer Capacitance

CRSS

110

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −10 V,

ID = −3.3 A

Gate−to−Source Charge

QGS

1.5

Gate−to−Drain Charge

QGD

2.8

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −10 V,

ID = −1.0 A, RG = 6.0 W

0.85

Rise Time

1.7

Turn−Off Delay Time

td(OFF)

2.7

Fall Time

4.2

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = −1.3 A,

TJ = 25°C

−0.75

−1.2

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100

A/ms,

IS = −1.3 A

Charge Time

9.0

Discharge Time

Reverse Recovery Charge

QRR

0.23

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

NTJS4151P 데이터시트(PDF) 2 Page - ON Semiconductor

NTJS4151P 데이터시트(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

데이터시트 다운로드

링크 URL