1998 Apr 01

3

Philips Semiconductors

Product specification

N-channel enhancement mode vertical

D-MOS transistor

BSP121

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Note

1. Device mounted on an epoxy printed-circuit board 40 mm

× 40 mm × 1.5 mm; mounting pad for the drain lead

Drain-source voltage

max.

200 V

Gate-source voltage (open drain)

±V

GSO

max.

20 V

Drain current (DC)

max.

350 mA

Drain current (peak)

max.

1.2 A

Total power dissipation up to

max.

1.5 W

Storage temperature range

−65 to + 150 °C

Junction temperature

max.

150

°C

From junction to ambient (note 1)

=

83.3 K/W