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BSP152 데이터시트(PDF) 7 Page - NXP Semiconductors |
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BSP152 데이터시트(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() April 1995 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 Fig.13 Temperature coefficient of drain-source on-resistance. Typical RDSon at ID = 750 mA; VGS = 10 V. k R DS(on) at Tj R DS(on) at 25 o C ------------------------------------------- = handbook, halfpage 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 50 100 150 –50 k MRC209 Tj (°C) Fig.14 Temperature coefficient of gate-source threshold voltage. Typical VGS(th) at ID = 1 mA. k V GS(th) at Tj V GS(th) at 25 o C ------------------------------------------- = handbook, halfpage 0.6 0.8 1 1.2 0 50 100 150 –50 k Tj (°C) MRC213 |
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