1996 Aug 05

7

Philips Semiconductors

Product specification

P-channel enhancement mode

vertical D-MOS transistor

BSP255

Fig.9

Drain source on-state resistance as a function

of gate-source voltage; typical values.

(1)

(2)

(3)

(4)

(5)

handbook, halfpage

−10

VGS (V)

0

MBH437

10

−2

−4

−6

RDSon

(

Ω)

−8

(1)

(2)

(3)

(4)

(5)

Fig.10 Capacitance as a function of drain-source

voltage; typical values.

handbook, halfpage

0

120

160

80

40

0

−10

−20

−50

−40

−30

MBH442

C

(pF)

VDS (V)

Crss

Ciss

Coss

Fig.11 Switching time test circuit and input and output waveforms.

handbook, full pagewidth

MGD391

10 %

90 %

Vin

Vout

td(on)

ton

toff

tr

tf

td(off)

10 %

90 %

10 %

90 %

0

0

−VDD

RL

Vout

Vin