1997 Sep 03

3

Philips Semiconductors

Product specification

NPN Darlington transistors

BSS50; BSS51; BSS52

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSS50

−

60

V

BSS51

−

80

V

BSS52

−

90

V

collector-emitter voltage

BSS50

−

45

V

BSS51

−

60

V

BSS52

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

base current (DC)

−

100

mA

total power dissipation

−

0.8

W

−

5W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

220

K/W

thermal resistance from junction to case

35

K/W