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BST76 데이터시트(PDF) 5 Page - NXP Semiconductors |
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BST76 데이터시트(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1997 Jun 20 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST76A Fig.6 Output characteristics; typical values. Tj =25 °C. (1) VGS =10V. (2) VGS =5V. (3) VGS =4V. (4) VGS =3V. handbook, halfpage 0 (1) (2) (3) (4) 10 1 0 VDS (V) ID (A) 0 .2 0 .4 0 .6 0 .8 24 6 8 MDA164 Fig.7 Transfer characteristic; typical values. VDS = 10 V; Tj =25 °C. handbook, halfpage 010 1 0 VGS (V) ID (A) 0 .2 0 .4 0 .6 0 .8 24 6 8 MDA170 Fig.8 Drain current as a function of drain-source on-state resistance; typical values. Tj =25 °C. (1) VGS =10V. (2) VGS =5V. (3) VGS =4V. handbook, halfpage 14 4 ID (mA) RDSon (Ω) 6 8 10 12 103 102 10 MDA169 (1) (2) (3) Fig.9 Temperature coefficient of gate-source threshold voltage; typical values. VGSth at 0.1 mA. k V GSth at Tj V GSth at 25 ° C -------------------------------------- = handbook, halfpage −50 1.2 1 0.8 0.6 k 0 50 150 100 MDA167 Tj ( oC) |
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