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CPM3-1700-R020E Rev. 1 , 09-2021

CPM3-1700-R020E

Silicon Carbide Power MOSFET

C3M

TM MOSFET Technology

N-Channel Enhancement Mode

Features

• C3M SiC MOSFET technlogy

• High Blocking Voltage with Low R

DS(on)

• Easy to parallel and simple to drive

• Resistant to Latch-up

Benefits

• Higher System Efficiency

• Low Conduction Losses over Temperature

• Reduced Cooling Requirements

• Increased System Switching Frequency

Applications

• Solid-state Circuit Breaker

• Industrial Inverters / Converters

• Uninterruptible Power Supply

Chip Outline

Part Number

Die Size (mm)

CPM3-1700-R020E

Please contact your sales rep-

resentative to get die size and

layout information

V

DS

1700 V

I

D @ 25˚C

120 A

R

DS(on)

18 mΩ

Maximum Ratings

Stress beyond those listed under absolute maximum ratings may cause permanent damage to the device. Exposure to absolute maximum

rated conditions for an extended period may affect device reliability.

Symbol

Parameter

Value

Unit

VDSmax

Drain - Source Voltage, T

vj ≥ -55 ˚C

1700

V

VGSmax

Max Gate - Source Voltage

-8/+19

V

VGS, DC

Recommended Static Gate - Source Voltage

-4/+15

V

ID

1

Continuous Drain Current, limited by T

vjmax, VGS

= 15V, assumes R

th(j-c) < 0.275 K/W

T

C = 25 ˚C

120

A

T

C = 100 ˚C

86

ID(pulse)

1

Pulsed Drain Current, t

p limited by Tvjmax

249

A

T

VJ , Tstg

1

Virtual Junction and Storage Temperature

-55 to +175

˚C

T

Proc

Maximum Processing Temperature, in non-reactive ambient environment

325

˚C

1

Verified by design

G - Gate

S - Source

D - Drain