BST86 datasheet(2/12 Pages) PHILIPS

2 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BST86

DESCRIPTION

N-channel enhancement mode

vertical D-MOS transistor in SOT89

envelope and designed for use as

Surface Mounted Device (SMD) in

thin and thick-film circuits for

application with relay, high-speed and

line-transformer drivers.

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No second breakdown

QUICK REFERENCE DATA

PINNING - SOT89

Drain-source voltage

VDS

max.

180 V

Drain-source voltage (non-repetitive peak;

tp ≤ 2 ms)

VDS(SM)

max.

200 V

Gate-source voltage (open drain)

±V

GSO

max.

20 V

Drain current (DC)

max.

300 mA

Total power dissipation up to Tamb =25 °CPtot

max.

1 W

Drain-source ON-resistance

typ.

max.

Ω

ID = 15 mA; VGS =3 V

RDS(on)

Transfer admittance

ID = 300 mA; VDS = 15 V

 Yfs

typ.

250 mS

= source

= drain

= gate

PIN CONFIGURATION

Fig.1 Simplified outline and symbol.

Marking: K0

handbook, halfpage

MAM355

Bottom view

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