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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MBR30100DT 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR30100DT 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR30100DT FEATURES · Dual Rectifier Conduction, Positive Center Tap · Low Power Loss/High Efficiency · High Current Capability, Low Forward Voltage Drop · High Surge Capacity · Guarding for Overvoltage protection · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for AC/DC switching adaptor and other switching power supply applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM repetitive reverse blocking voltage 100 V IF forward voltage drop 30 A IFSM Following any rated load condition and with rated.VAAM applied 5 µs sine or 3 μs rect. pulse 350 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
유사한 부품 번호 - MBR30100DT |
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유사한 설명 - MBR30100DT |
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