| 전자부품 데이터시트 검색엔진 |
|
CGH40120F 데이터시트(PDF) 1 Page - WOLFSPEED, INC. |
|
|
|||||||||||||||||||||||||||||
CGH40120F 데이터시트(HTML) 1 Page - WOLFSPEED, INC. |
|
1 / 13 page ![]() Rev 4.1 - March 2020 4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com CGH40120F 120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40120F ideal for linear and compressed amplifier circuits. The transistor is available in a flange package. Package Types: 440193 PN: CGH40120F Features • Up to 2.5 GHz Operation • 20 dB Small Signal Gain at 1.0 GHz • 15 dB Small Signal Gain at 2.0 GHz • 120 W Typical P SAT • 70 % Efficiency at P SAT • 28 V Operation Applications • 2-Way Private Radio • Broadband Amplifiers • Cellular Infrastructure • Test Instrumentation • Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO |
유사한 부품 번호 - CGH40120F |
|
유사한 설명 - CGH40120F |
|
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |