AlGaAs SP3T PIN Diode Switch

MA4AGSW3

V 1.00

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2

Typical Driver Connections

Control Level (DC Current)

RF Output Conditions

J2

J3

J2-J1

J3-J1

-10 mA

+10 mA

Low Loss

Isolation

+10 mA

-10 mA

Isolation

Low Loss

J4

+10 mA

+10 mA

+10 mA

+10 mA

-10 mA

Isolation

Isolation

J4-J1

Isolation

Isolation

Low Loss

(On-Wafer Measurements)

RF Specifications

Parameters

Frequency

Minimum

Typical

Maximum

Units

Insertion Loss

0.05 - 18 GHz

18 - 50 GHz

-

0.6

0.8

0.7

1.1

dB

Isolation

0.05 - 18 GHz

18 - 50 GHz

38

24

45

31

-

dB

Input Return Loss

0.05 - 18 GHz

18 - 50 GHz

-

21

24

-

dB

Output Return Loss

0.05 - 18 GHz

18 - 50 GHz

-

26

20

-

dB

Switching Speed

10 GHz

-

20

-

ns

1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver

output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve

20 ns rise and fall times.

NOTES: