| 전자부품 데이터시트 검색엔진 |
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2SC1162 데이터시트(PDF) 2 Page - Nanjing International Group Co |
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2SC1162 데이터시트(HTML) 2 Page - Nanjing International Group Co |
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2 / 3 page ![]() Parameter Symbol Test conditions M in T yp Max U nit Collector-base breakdown voltage V(BR)CBO IC =1mA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC =10mA,IB=0 35 V Emitter-base breakdown voltage V(BR)EBO IE=1mA ,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 20 μA Emitter cut-off current IEBO VEB=5V,IC=0 20 μA hFE1 VCE=2V,IC=0.5A 60 320 DC current gain hFE2 VCE=2V,IC=1.5A * 20 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=200mA 1 V Base-collector voltage VBE VCE=2V,IC=1.5A 1.5 V Transition frequency fT VCE=2V,IC=200mA 180 MHz *pulse test CLASSIFICATION OF hFE1 Rank B C D Range 60-120 100-200 160-320 (/(&75,&$/&+$5$&7(5,67,&6 a T =25 unless otherwise specified * 2/3 Dongguan Nanjing Electronics Ltd. www.dgnjdz.com |
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