GTRA260502M-V1-R3K datasheet(1/9 Pages) WOLFSPEED

부품명	GTRA260502M-V1-R3K

상세설명	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 2515 – 2675 MHz

PDF	9 Pages

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제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

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1 / 9 page

Rev. 04, 2023-06-26

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Features

• GaN on SiC HEMT technology

• Typical pulsed CW performance: 10 µs pulse width,

10% duty cycle, 2690 MHz, 48 V, Doherty configuration

- Efficiency = 64%

- Output power at P3dB = 50 W

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a thermally-

enhanced DFN SMD package.

GTRA260502M

Package PG-DFN-6.5x7-1

GTRA260502M

Thermally-Enhanced High Power RF GaN on SiC HEMT

50 W, 48 V, 2515 – 2675 MHz

Typical RF Characteristics

Single–carrier WCDMA Specifications (tested in Wolfspeed application circuit for 2515 –2675 MHz)

VDD = 48 V, IDQ = 25 mA, VGS(peak) = – 5 V, channel bandwidth = 3.84 MHz, input PAR = 10 dB @ 0.01% CCDF

POUT

(dBM)

Gain

(dB)

Efficiency

(%)

ACPR +

(dBc)

ACPR –

(dBc)

OPAR

(dB)

2500 MHz

39.0

15.8

59.5

–28.5

8.6

2550 MHz

39.0

16.2

59.7

–28.2

8.4

2600 MHz

39.0

16.5

59.2

–27.2

8.2

2650 MHz

39.0

16.6

56.3

–26.5

–26.4

7.9

2700 MHz

39.0

16.4

53.9

–26.3

–26.1

8.1

5

15

25

35

45

55

65

3

6

9

12

15

18

21

18

23

28

33

38

43

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 25 mA,

VPK = –5.0 V, ƒ = 2700 MHz

3GPP WCDMA signal

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

gtra260502m-gr1a

유사한 부품 번호 - GTRA260502M-V1-R3K

제조업체	부품명	데이터시트	상세설명
Cree, Inc	GTRA260502M	205Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT

More results

유사한 설명 - GTRA260502M-V1-R3K

제조업체	부품명	데이터시트	상세설명
Cree, Inc	GTRA364002FC	279Kb / 5P	Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 48 V, 3400 ??3600 MHz
	GTVA263202FC	458Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 ??2690 MHz
	GTRA263902FC	486Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 370 W, 48 V, 2495 ??2690 MHz
	GTVA261802FC	495Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 ??2690 MHz
	GTVA262711FA	464Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 300 W, 48 V, 2620 ??2690 MHz
WOLFSPEED, INC.	GTRA360502M-V1	844Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 50 W, 48 V, 3400 – 3800 MHz Rev. 04, 2023-06-27
	GTRA262802FC	515Kb / 9P	Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 – 2690 MHz Rev. 03.3, 2022-1-27
	GTVA212701FA	566Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2110 – 2200 MHz Rev. 04.2, 2022-1-27
	GTVA261802FC	536Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 48 V, 2620 – 2690 MHz Rev. 02.1, 2022-1-27
	GTVA263202FC	632Kb / 8P	Thermally-Enhanced High Power RF GaN on SiC HEMT 340 W, 48 V, 2620 – 2690 MHz Rev. 04.1, 2022-1-27

More results

GTRA260502M-V1-R3K 데이터시트(PDF) 1 Page - WOLFSPEED, INC.

GTRA260502M-V1-R3K 데이터시트(HTML) 1 Page - WOLFSPEED, INC.

유사한 부품 번호 - GTRA260502M-V1-R3K

유사한 설명 - GTRA260502M-V1-R3K

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