2SC2715 datasheet(1/4 Pages) DGNJDZ

부품명	2SC2715

상세설명	SOT-23 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

제조업체	DGNJDZ [Nanjing International Group Co]

홈페이지	http://www.dgnjdz.com/

Logo

1 / 4 page

2SC2715 TRANSISTOR (NPN)

FEATURES

High Power Gain

Recommended for FM IF,OSC Stage and AM CONV. IF Stage.

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10μA, IE=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10μA, IC=0

4

V

Collector cut-off current

ICBO

VCB=35V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.1

μA

DC current gain

hFE(1)

VCE=12V, IC=2mA

40

240

Collector-emitter saturation voltage

VCE(sat)

IC=10mA, IB=1mA

0.4

V

Base-emitter saturation voltage

VBE(sat)

IC=10mA, IB=1mA

1

V

Transition frequency

fT

VCE=10V, IC=1mA

100

400

MHz

Power Gain

Gpe

VCE=6V, IC=1mA, f=10.7

MHz

27

33

dB

CLASSIFIC ATION OF h FE(1)

Rank

R

O

Y

Range

40-80

70-140

120-240

Marking

RR1

RO1

RY1

SOT-23

1.

BASE

2.

EMITTER

3.

COLLECTOR

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

3.2

pF

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current -Continuous

5

0

mA

PC

Collector Power Dissipation

35

0

mW

Operation Junction and Storage Temperature Range

℃

TJ,Tstg

-55

~+150

RθJA

Thermal Resistance

from Junction to Ambient

357

℃/W

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/4

유사한 부품 번호 - 2SC2715

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC2715	314Kb / 7P	TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS)
Toshiba Semiconductor	2SC2715	972Kb / 8P	Silicon NPN Epitaxial Planar Type (PCT process)
Galaxy Semi-Conductor H...	2SC2715	262Kb / 3P	Silicon Epitaxial Planar Transistor Rev.A
Guangdong Kexin Industr...	2SC2715	36Kb / 1P	Silicon NPN Epitaxial
SeCoS Halbleitertechnol...	2SC2715	913Kb / 4P	NPN Plastic-Encapsulate Transistor

More results

유사한 설명 - 2SC2715

제조업체	부품명	데이터시트	상세설명
List of Unclassifed Man...	S9014LT1	1Mb / 2P	SOT-23 Plastic-Encapsulate Transistors
Avic Technology	AV9015LT1	37Kb / 1P	SOT-23 Plastic-Encapsulate Transistors
Daya Electric Group Co....	MMBT3904	186Kb / 2P	SOT-23 Plastic-Encapsulate Transistors
	MMBTA42	202Kb / 3P	SOT-23 Plastic-Encapsulate Transistors
	MMBTA13	389Kb / 3P	SOT-23 Plastic-Encapsulate Transistors
	MMBT3906	180Kb / 3P	SOT-23 Plastic-Encapsulate Transistors
WILLAS ELECTRONIC CORP	A733	434Kb / 3P	SOT-23 Plastic-Encapsulate Transistors
SHENZHEN YONGERJIA INDU...	BCW61BLT1	150Kb / 1P	SOT-23 Plastic-Encapsulate Transistors
Nanjing International G...	MMBT2222A	693Kb / 2P	SOT-23 Plastic-Encapsulate Transistors
Nanjing International G...	S9015	504Kb / 2P	SOT-23 Plastic-Encapsulate Transistors

More results

2SC2715 데이터시트(PDF) 1 Page - Nanjing International Group Co

2SC2715 데이터시트(HTML) 1 Page - Nanjing International Group Co

유사한 부품 번호 - 2SC2715

유사한 설명 - 2SC2715

Html Pages

1 2 3 4

데이터시트 다운로드

링크 URL