PTRA084808NF-V1-R5 datasheet(1/12 Pages) WOLFSPEED

부품명	PTRA084808NF-V1-R5

상세설명	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 – 821 MHz

PDF	12 Pages

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제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

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1 / 12 page

Rev. 03.4, 2022-1-27

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PTRA084808NF

Package Types: PG-HBSOF-6-2

PN: PTRA084808NF

Features

• Broadband internal matching

• Asymmetric design

- Main: P

1dB = 200 W typical

- Peak: P

1dB = 350 W typical

• Typical pulsed CW performance (class AB), 800

MHz, 48 V, 10 μs pulse width, 10% duty cycle,

Doherty configuration

- Output power at P

3dB = 550 W

- Efficiency = 56%

- Gain = 18.5 dB

• Capable of handling 10:1 VSWR @ 48 V, 89 W (CW)

output power

• Integrated ESD protection

• Human Body Model Class 1C (per ANSI/ESDA/

JEDEC JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Thermally-Enhanced High Power RF LDMOS FET

550 W, 48 V, 734 – 821 MHz

Description

The PTRA084808NF is a 550-watt LDMOS FET intended for use in multi-standard

cellular power amplifier applications in the 734 to 821 MHz frequency band. Features

include input matching, high gain and thermally-enhanced package with earless

flanges. Manufactured with Wolfspeed’s advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

V

DD = 48 V, IDQ = 450 mA, VGS(PEAK) = 1.2 V, POUT = 87 W avg, ƒ = 800 MHz. 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF.

Characteristic

Symbol

Min.

Typ.

Max.

Unit

Gain

G

ps

17.5

18.2

—

dB

Drain Efficiency

h

D

52.5

55

—

%

Adjacent Channel Power Ratio

ACPR

—

–30

–27.5

dBc

Output PAR @ 0.01% CCDF

OPAR

6.5

7

—

dB

Note:

All published data at T

CASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ(MAIN) = 450 mA,

VGS(PEAK) = 1.2 V, ƒ = 800 MHz.

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

ptra080408nf-gr1a

유사한 부품 번호 - PTRA084808NF-V1-R5

제조업체	부품명	데이터시트	상세설명
Cree, Inc	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz

More results

유사한 설명 - PTRA084808NF-V1-R5

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTFB082817FH	667Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz Rev. 02, 2010-12-13
	PTRA093818NF	470Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz Rev. 05.1, 2017-08-16
	PTVA082407NF	453Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz Rev. 02.5, 2017-07-18
Cree, Inc	PTVA082407NF	639Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 ??821 MHz
	PTVA120252MT	530Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz
	PTRA084808NF	649Kb / 12P	Thermally-Enhanced High Power RF LDMOS FET 550 W, 48 V, 734 ??821 MHz
	PTRA087008NB	660Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 650 W, 48 V, 755 ??805 MHz
	PTVA092407NF	595Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 869 ??960 MHz
WOLFSPEED, INC.	PTVA082407NF	733Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 48 V, 746 – 821 MHz Rev. 04.1, 2022-02-13
WOLFSPEED, INC.	PTVA120252MT	553Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Rev. 04.1, 2022-02-13

More results

PTRA084808NF-V1-R5 데이터시트(PDF) 1 Page - WOLFSPEED, INC.

PTRA084808NF-V1-R5 데이터시트(HTML) 1 Page - WOLFSPEED, INC.

유사한 부품 번호 - PTRA084808NF-V1-R5

유사한 설명 - PTRA084808NF-V1-R5

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