PTRA097008NB-V1-R2 datasheet(1/10 Pages) WOLFSPEED

부품명	PTRA097008NB-V1-R2

상세설명	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 – 960 MHz

PDF	10 Pages

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제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

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1 / 10 page

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 04, 2023-06-22

The information in this document is subject to change without notice.

4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300

PTRA097008NB

Package PG-HB2SOF-6-1

Thermally-Enhanced High Power RF LDMOS FET

630 W, 48 V, 920 – 960 MHz

Description

The PTRA097008NB is a 630-watt LDMOS FET intended for use in multi-

standard cellular power amplifier applications in the 920 to 960 MHz

frequency band. Features include input and output matching, high gain

and thermally-enhanced package with earless flanges. Manufactured

with Wolfspeed's advanced LDMOS process, this device provides excel-

lent thermal performance and superior reliability.

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

VDD = 50 V, IDQ = 600 mA, VGS(PEAK) = 2.4 V, POUT = 90 W avg, ƒ1 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =

10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

18.25

19

—

dB

Drain Efficiency

hD

46.5

49

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–26

dBc

Output PAR @ 0.01% CCDF

OPAR

6.0

6.8

—

dB

Features

• Broadband internal input and output matching

• Asymmetric design

- Main: P1dB = 300 W typical

- Peak: P1dB = 400 W typical

• Typical pulsed CW performance (10 µs, 10% duty

cycle, class AB test), 942 MHz, 48 V, combined outputs,

Doherty configuration

- Output power at P1dB = 180 W

- Output power at P3dB = 600 W

- Efficiency = 52%

- Gain = 19 dB

• Capable of handing 10:1 VSWR at 48 V, 89 W (CW)output

power

• Integrated ESD protection

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS-compliant

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 50 V, IDQ(MAIN) = 600 mA,

VGS(PEAK) =2.4 V,ƒ =960MHz,

3GPP WCDMA signal, 10 dB PAR,

3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

ra097008nb-gr1a

PTRA097008NB

유사한 부품 번호 - PTRA097008NB-V1-R2

제조업체	부품명	데이터시트	상세설명
Cree, Inc	PTRA097008NB	732Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 ??960 MHz

More results

유사한 설명 - PTRA097008NB-V1-R2

제조업체	부품명	데이터시트	상세설명
Infineon Technologies A...	PTFA091503EL	627Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920-960 MHz Rev. 03, 2010-08-11
	PTFB091507FH	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920-960 MHz Rev. 03, 2011-03-14
	PTFB091802FC	1Mb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz Rev. 02.1, 2016-06-10
	PTFB091507FH	1,015Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz Rev. 03.1, 2016-06-09
	PTFA091503EL	766Kb / 11P	Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 ??960 MHz Rev. 04, 2016-06-16
Cree, Inc	PTRA097008NB	732Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 630 W, 48 V, 920 ??960 MHz
	PTFB091507FH	618Kb / 13P	Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 ??960 MHz
	PTFB091802FC	538Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 ??960 MHz
	PTFB093608FV	1Mb / 13P	Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 ??960 MHz
	PTRA093818NF	600Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 ??960 MHz

More results

PTRA097008NB-V1-R2 데이터시트(PDF) 1 Page - WOLFSPEED, INC.

PTRA097008NB-V1-R2 데이터시트(HTML) 1 Page - WOLFSPEED, INC.

유사한 부품 번호 - PTRA097008NB-V1-R2

유사한 설명 - PTRA097008NB-V1-R2

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