PXAE261908NF-V1-R5 datasheet(6/9 Pages) WOLFSPEED

부품명	PXAE261908NF-V1-R5

상세설명	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz

PDF	9 Pages

Scroll/Zoom	100%

제조업체	WOLFSPEED [WOLFSPEED, INC.]

홈페이지	https://www.wolfspeed.com/

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6 / 9 page

PXAE261908NF

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Evaluation Circuit, 2515 – 2675 MHz

DUT

PXAE261908NF V1

Test Fixture Part No.

LTA/PXAE261908NF-V1

PCB

Rogers 4350B LoPro , 0.526 mm [0.0207”] thick, 1 oz. copper, εr = 3.66

C210

C212

C211

C208

C215

C105

C107

R102

C106

p xae2 6190 8 n f _C D _202 1- 03 - 26_ b n

PXAE261908NF_OUT_02

RO4350B LoPro 0.526mm

PXAE261908NF_OUT_02

RO4350B LoPro 0.526mm

C802

R802

R801

C801

C803

C102

C101

R103

R101

C103

C104

C203

C204 C205

C202

C209

C213

C214

C206

C207

RF_IN

RF_OUT

VDD

VGG

C201

Evaluation circuit assembly diagram (not to scale)

Bias Sequencing

Bias OFF

1. Turn RF off

2. Appliy pinch-off voltage of 0 V to the gate

3. Turn off drain voltage

4. Turn off gate voltage

Bias ON

1. Ensure RF is turned off

2. Apply pinch-off voltage of 0 V to the gate

3. Apply nominal drain voltage

4. Bias gate to desired quiescent drain current

5. Apply RF

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 04, 2023-07-24

PXAE261908NF-V1-R5 데이터시트(PDF) 6 Page - WOLFSPEED, INC.

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