4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 0

4, 2023-06-28

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXFE181507FC

Package H-37248G-4/2

Thermally-Enhanced High Power RF LDMOS FET

175 W, 28 V, 1805 – 1880 MHz

Features

• Broadband internal input and output matching

• Typical Pulsed CW performance, 1842 MHz, 28 V, single

side, 16 µs, 10% duty cycle, class AB test

- Output power at P1dB = 175 W

- Output power at P3dB = 222 W

- Efficiency at P3dB = 60%

- Gain = 21.3 dB

• Capable of handling 10:1 VSWR @ 28 V, 180 W (CW)

output power

• Human Body Model Class 2 (per ANSI/ESDA/JEDEC

JS-001)

• Integrated ESD protection

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The PXFE181507FC is a 175-watt LDMOS FET intended for use in multi-

standard cellular power amplifier applications in the 1805 to 1880 MHz

frequency band. Features include input and output matching, high gain

and thermally-enhanced package with earless flange. Manufactured with

Wolfspeed's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)

VDD = 28 V, IDQ = 900 mA, POUT = 50 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01%

CCDF

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

Gps

19

20

—

dB

Drain Efficiency

hD

32

36

—

%

Adjacent Channel Power Ratio

ACPR

—

–31

–27

dBc

Output PAR at 0.01% probability on CCDF

OPAR

5.7

6.2

—

dB

PXFE181507FC

-60

-40

-20

0

20

40

60

0

4

8

12

16

20

24

25

30

35

40

45

50

55

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 28 V, IDQ= 900 mA, ƒ = 1880 MHz

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

Gain

Efficiency

PAR @ 0.01% CCDF

pxfe181507fc_g1