All published data at TCASE = 25°C unless otherwise indicated

All published data at TCASE = 25°C unless otherwise indicated

Rev. 03, 2023-02-04

© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.

The information in this document is subject to change without notice.

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WS1A3640

Package PG-LGA-6x6-3-1

GaN on SiC Power Amplifier Module for 5G

Features

• GaN on SiC technology

• Frequency: 3300-3800 MHz

• Average Output Power: 39.5 dBm

• PSAT = 48 dBm

• RF inputs matched to 50 Ω and DC matched blocked

• Gate bias supply for main and peak sides available from either side

of device

• Integrated harmonic terminations

• Pb-free and RoHS compliant

WS1A3640

Description

The WS1A3640 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating Wolfspeed GaN on SiC HEMT transistors with

matching and biasing networks on a multilayer laminate substrate with advanced heat sinking technology. The WS1A3640 has been

designed to operate from 3300 MHz to 3800 MHz, from supply voltages up to 50 V, at average output power levels of 8 to 10 W with crest-

factor reduced and digitally pre-distorted LTE and 5G NR signals with instantaneous bandwidths of 200 MHz or more. The device is housed

in a 6 mm X 6 mm land grid array (LGA) package.

Typical Broadband Performance

Single-carrier LTE Performance (tested in Wolfspeed applications circuit for 3400 – 3800 MHz)

VDD = 48 V, IDQ(main) = 70 mA, VGS(peak) = –5 V, channel bandwidth = 18.015 MHz, input PAR = 10 dB @ 0.01% CCDF

POUT

(dBM)

Gain

(dB)

Efficiency

(%)

ACPR –

(dBc)

ACPR +

(dBc)

PAR

(dB)

3400 MHz

39.5

13.5

49.6

–25

–26

8.0

3600 MHz

39.5

13.0

51.0

–32

–33

8.4

3800 MHz

39.5

12.5

50.0

–35

–36

7.8