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WS1A3940-V2-R3K 데이터시트(PDF) 2 Page - WOLFSPEED, INC.

부품명 WS1A3940-V2-R3K
상세설명  GaN on SiC Power Amplifier Module for 5G
PDF  7 Pages
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제조업체  WOLFSPEED [WOLFSPEED, INC.]
홈페이지  https://www.wolfspeed.com/
Logo WOLFSPEED - WOLFSPEED, INC.

WS1A3940-V2-R3K 데이터시트(HTML) 2 Page - WOLFSPEED, INC.

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WS1A3940
2
Rev. 03, 2023-02-04
© 2023 Wolfspeed, Inc. All rights reserved. Wolfspeed® and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.
The information in this document is subject to change without notice.
4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300
Maximum Ratings at TCASE = 25˚C
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
125
V
Gate-source Voltage
VGS
–10 to +2
V
Operating Voltage
VDD
55
V
RF Input Power (main)
Pulse CW, 10% duty cycle,
20 μs pulse width
PIN
35.2
dBm
(peak)
PIN
38
dBm
Case Temperature
TC
135
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these
values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above.
DC Characteristics
Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage (main)
VGS = –8 V, ID = 3.36 mA
V(BR)DSS
150
—
—
V
(peak)
VGS = –8 V, ID = 5.6 mA
V(BR)DSS
150
—
—
V
Gate Leakage Current
VGS = –8 V, VDS = 50 V
IGSS
—
—
–1.5
mA
Gate Threshold Voltage (main)
VDS = 10 V, ID = 3.36 mA
VGS(th)
–3.8
–3.0
–2.3
V
Gate Threshold Voltage (peak)
VDS = 10 V, ID = 5.6 mA
VGS(th)
–3.6
–2.7
–2
V
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Operating Voltage
VDD
0
—
50
V
Gate Quiescent Voltage (main)
VDS = 48 V, ID = 30 mA
VGS(Q)
–3.6
–3.1
–2.6
V
Gate Quiescent Voltage (peak)
VDS = 48 V, ID = 40 mA
VGS(Q)
–3.6
–3.1
–2.6
V
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
Unit
3
IPC/JEDEC J-STD-020
260
°C
ESD Characteristics
Parameter
Class
Standard
Human Body Model (HBM)
Class 1B
ANSI/ESDA/JEDEC JS-001
Charge Device Model (CDM)
Class C3
ANSI/ESDA/JEDEC JS-002



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