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WSGPA01-V1-R3K 데이터시트(PDF) 2 Page - WOLFSPEED, INC.

부품명 WSGPA01-V1-R3K
상세설명  10 W, 5 GHz, GaN on SiC General Purpose Power Amplifier
PDF  7 Pages
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제조업체  WOLFSPEED [WOLFSPEED, INC.]
홈페이지  https://www.wolfspeed.com/
Logo WOLFSPEED - WOLFSPEED, INC.

WSGPA01-V1-R3K 데이터시트(HTML) 2 Page - WOLFSPEED, INC.

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4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Rev. 02.1, 2021-07-13
2
WSGPA01
Absolute Maximum Ratings (Case Temperature TCASE = 25˚C)
Parameter
Symbol
Value
Unit
Drain-source Voltage
VDSS
125
V
Gate-source Voltage
VGS
–10 to +2
V
Gate Current
IG
1.2
mA
Drain Current
ID
12
A
Operating Voltage
VDD
55
V
Junction Temperature
TJ
225
°C
Storage Temperature Range
TSTG
–65 to +150
°C
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these
values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above.
DC Characteristics
Characteristics
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = –8 V, ID = 10 mA
V(BR)DSS
150
—
—
V
Drain-Source Leakage Current
VGS = –8 V, VDS = 50 V
IGSS
—
—
–0.5
mA
Gate Threshold Voltage
VDS = 10 V, ID = 1.2 mA
VGS(th)
–3.8
–3.1
–2.3
V
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Drain Operating Voltage
VDD
0
—
50
V
Gate Quiescent Voltage
VDS = 48 V, ID = 25 mA
VGS(Q)
–3.45
–2.9
–2.45
V
Thermal Characteristics
Characteristics
Symbol
Value
Unit
Thermal Resistance (TCASE = 105°C, POUT = 26.5 dBM CW)
RqJC
10.1
°C/W
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
Unit
3
IPC/JEDEC J-STD-020
260
°C
ESD Characteristics
Parameter
Class
Standard
Human Body Model (HBM)
Class 1A
ANSI/ESDA/JEDEC JS-001
Charge Device Model (CDM)
Class C2b
ANSI/ESDA/JEDEC JS-002



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