Philips Semiconductors

Product specification

Thyristors

BT151B series

Fig.1. Maximum on-state dissipation, P

average on-state current, I

a = form factor = I

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, t

Fig.3. Maximum permissible rms current I

versus mounting base temperature T

Fig.4. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

Fig.5. Maximum permissible repetitive rms on-state

current I

currents, f = 50 Hz; T

Fig.6. Normalised gate trigger voltage

V

0

1

2

345

67

8

0

5

10

15

a = 1.57

1.9

2.2

2.8

4

BT151

IT(AV) / A

Ptot / W

Tmb(max) / C

125

118.5

112

105.5

conduction

angle

form

factor

degrees

30

60

90

120

180

4

2.8

2.2

1.9

1.57

a

1

10

100

1000

0

20

40

60

80

100

120

BT151

Number of half cycles at 50Hz

ITSM / A

T

ITSM

time

I

Tj initial = 25 C max

T

10

100

1000

BT151

10us

100us

1ms

10ms

T / s

ITSM / A

T

ITSM

time

I

Tj initial = 25 C max

T

dI /dt limit

T

0.01

0.1

1

10

0

5

10

15

20

25

BT151

surge duration / s

IT(RMS) / A

-50

0

50

100

150

0

5

10

15

BT151

Tmb / C

IT(RMS) / A

109 C

-50

0

50

100

150

0.4

0.6

0.8

1

1.2

1.4

1.6

BT151

Tj / C

VGT(Tj)

VGT(25 C)

September 1997

3

Rev 1.100