BLF369_2

© NXP B.V. 2006. All rights reserved.

Objective data sheet

Rev. 02 — 8 December 2006

2 of 13

NXP Semiconductors

BLF369

VHF power LDMOS transistor

2.

Pinning information

[1]

Connected to flange.

3.

Ordering information

4.

Limiting values

5.

Thermal characteristics

[1]

[2]

[3]

Table 2.

Pinning

Pin

Description

Simplified outline

Symbol

1

drain1

2

drain2

3

gate1

4

gate2

5

source

[1]

5

12

4

3

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF369

-

flanged LDMOST ceramic package; 2 mounting holes;

4 leads

SOT800-2

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

−0.5

+13

V

storage temperature

−65

+150

°C

junction temperature

-

200

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction to case

[1][2] 0.26

K/W

[1][2][3] 0.35

K/W