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M16C/62 데이터시트(PDF) 37 Page - Renesas Technology Corp |
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M16C/62 데이터시트(HTML) 37 Page - Renesas Technology Corp |
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37 / 87 page ![]() M16C/62 Group (M16C/62P, M16C/62PT) 5. Electrical Characteristics (M16C/62P) 4 8 f o 3 0 0 2 , 7 0 . v o N 0 1 . 2 . v e R page 37 VCC1 = VCC2 = 5V Table 5.12 Electrical Characteristics (2) (1) Symbol Standard Typ. Unit Measuring condition Min.Max. Parameter ICC Power supply current (VCC1=4.0 to 5.5V) No division, PLL operation mA In single-chip mode, the output pins are open and other pins are VSS 14 20 f(BCLK)=24MHz, No division, PLL operation mA 18 f(BCLK)=24MHz, Mask ROM 27 Flash memory 15mA Flash memory Program VCC1=5.0V f(BCLK)=10MHz, 25mA Flash memory Erase VCC1=5.0V f(BCLK)=10MHz, Topr=25 °C 3.0 µA Stop mode, f(BCLK)=32kHz, Wait mode (2), Oscillation capacity High 7.5 µA 0.8 2.0 µA Mask ROM Flash memory NOTES: 1. Referenced to VCC1=VCC2= 4.2 to 5.5V, VSS=0V at Topr = -20 to 85 °C / -40 to 85 °C, f(BCLK)=24MHz unless otherwise specified. 2. With one timer operated using fC32. 3. This indicates the memory in which the program to be executed exists. 4. Idet is dissipation current when the following bit is set to “1” (detection circuit enabled). Idet4: VC27 bit of VCR2 register Idet3: VC26 bit of VCR2 register Idet2: VC25 bit of VCR2 register mA 1.8 Wait mode µA Low power dissipation mode, ROM (3) f(XCIN)=32kHz, µA Mask ROM Low power dissipation mode, RAM (3) f(BCLK)=32kHz 420 µA Low power dissipation mode, Flash memory (3) f(BCLK)=32kHz, µA Flash memory 25 Ring oscillation, 50 mA 1 No division, Ring oscillation 25 f(BCLK)=32kHz, Wait mode (2), Oscillation capacity Low Idet4 Voltage down detection dissipation current (4) 4 µA 0.7 Idet3 Reset area detection dissipation current (4) 8 µA 1.2 Idet2 RAM retention limit detection dissipation current (4) 6 µA 1.1 No division, Ring oscillation |
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