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C30659-900-R5B 데이터시트(PDF) 4 Page - PerkinElmer Optoelectronics |
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C30659-900-R5B 데이터시트(HTML) 4 Page - PerkinElmer Optoelectronics |
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4 / 9 page ![]() www .optoelectr onics.perkinelmer.com Page 4 C30659-1550nm Series C30659-1550nm Series Test Conditions: Ambient Temperature, Vamp = ±5 Volts, HV = +VR (see Note 1), RL = 50 Ω AC Coupled 1550nm InGaAs APD Detector Type C30659-1550-R2A C30659-1550-R08B (InGaAs APD C30662E) (InGaAs APD C30645E) Min Typ Max Min Typ Max Active Diameter 0.2 0.08 mm Active Area 0.03 0.005 mm2 Bandwidth Range 50 200 MHz Temperature Coefficient of VR for constant Gain - 0.2 - - 0.2 - V/°C VR for specified responsivity 40 Note 1 70 40 Note 1 70 V Temperature sensor sensitivity -1.8 -2.1 -2.4 -1.8 -2.1 -2.4 mV/°C Responsivity At 1300nm - 300 - - 80 - kV/W At 1550nm - 340 - - 90 - kV/W RF (Internal Feedback Resistor) - 68 - - 18 - k Ω Noise Equivalent Power (NEP) (note 3) f - 100 kHz, ∆f = 1.0 Hz At 1300nm - 150 180 - 250 375 fW/ √Hz At 1550nm - 130 160 - 220 330 fW/ √Hz Output Spectral Voltage: (f = 100 kHz - f-3dB) - 45 55 - 20 30 nV/ √Hz Output Impedance 33 40 50 33 40 50 Ω System Bandwidth, f-3dB 40 50 - 175 200 - MHz Rise Time, tr ( λ = 900 and 1060nm) 10% to 90% points - 7 - - 2 - ns Fall Time, tf ( λ = 830 and 900nm) 90% to 10% points - 7 - - 2 - ns Recovery time after overload (note 4) - - 150 - - 150 ns Output Voltage Swing (1k Ω load) (note 5) 2 3 - 2 3 - V Output Voltage Swing (50 Ω load) (note 5) 0.7 0.9 - 0.7 0.9 - V Output Offset Voltage -1 -0.3 1 -1 -0.3 1 V Positive Supply Current (V+) - 20 35 - 20 35 mA Negative Supply Current (V-) - 10 20 - 10 20 mA Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges. 2. If = 0.1 mA, 25°C 3. NEPmax is the Maximum Output Spectral Noise Voltage divided by the typical Responsivity. 4. 0dBm, 250ns pulse. 5. Pulsed operation. Table 3. Electrical Characteristics at TA=22ºC 117142_C30659.qxd 6/21/04 2:33 PM Page 4 |
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