PMD9003D_1

© NXP B.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 24 November 2006

3 of 15

NXP Semiconductors

PMD9003D

MOSFET driver

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

IC

collector current

-

0.1

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

0.2

A

IBM

peak base current

single pulse;

tp ≤ 1ms

-

0.2

A

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

290

mW

[2] -

325

mW

[3] -

400

mW

Diode (D1)

IF

forward current

-

−0.2

A

IFRM

repetitive peak forward current

tp ≤ 1 ms; δ≤ 0.25

-

−0.6

A

IFSM

non-repetitive peak forward

current

square wave

tp =1 µs-

−9A

tp = 100 µs-

−3A

tp =10ms

-

−1.7

A

Device

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit