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IRFN450 데이터시트(PDF) 2 Page - International Rectifier

부품명 IRFN450
상세설명  POWER MOSFET SURFACE MOUNT(SMD-1)
PDF  7 Pages
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제조업체  IRF [International Rectifier]
홈페이지  http://www.irf.com
Logo IRF - International Rectifier

IRFN450 데이터시트(HTML) 2 Page - International Rectifier

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IRFN450
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
—
—
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
—
0.68
—
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
—
—
0.415
VGS = 10V, ID = 8.0A
Resistance
—
—
0.515
VGS = 10V, ID = 12A
VGS(th)
Gate Threshold Voltage
2.0
—
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.5
—
—
S ( )VDS > 15V, IDS = 8.0A ➃
IDSS
Zero Gate Voltage Drain Current
—
—
25
VDS= 400V ,VGS=0V
—
—
250
VDS = 400V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
—
—
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
—
-100
VGS = -20V
Qg
Total Gate Charge
—
—
120
VGS =10V, ID = 12A
Qgs
Gate-to-Source Charge
—
—
19
nC
VDS =250V
Qgd
Gate-to-Drain (‘Miller’) Charge
—
—
70
td(on)
Turn-On Delay Time
—
—
35
VDD = 250V, ID = 12A,
tr
Rise Time
—
—
190
VGS =10V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
—
—
170
tf
Fall Time
—
—
130
LS + LD
Total Inductance
—
4.0
—
Ciss
Input Capacitance
—
2700
—
VGS = 0V, VDS = 25V
Coss
Output Capacitance
—
600
—
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
—
240
—
nA
➃
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
—
—
0.83
RthJ-PCB
Junction-to-PC board
—
3.0
—
Soldered to a copper-clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
—
—
12
ISM
Pulse Source Current (Body Diode) ➀
——
48
VSD
Diode Forward Voltage
—
—
1.7
V
Tj = 25°C, IS = 12A, VGS = 0V ➃
trr
Reverse Recovery Time
—
—
1600
nS
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
—
—
14
µC
VDD ≤ 30V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from the center of drain
pad to center of source pad.
Ω



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