2SC5976 datasheet(1/5 Pages) TOSHIBA

부품명	2SC5976

상세설명	Transistor Silicon NPN Epitaxial Type

PDF	5 Pages

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제조업체	TOSHIBA [Toshiba Semiconductor]

홈페이지	http://www.semicon.toshiba.co.jp/eng

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2SC5976

2004-07-01

1

TOSHIBA Transistor Silicon NPN Epitaxial Type

2SC5976

High-Speed Switching Applications

DC-DC Converter Applications

Strobe Flash Applications

• High DC current gain: hFE = 250 to 400 (IC = 0.3 A)

• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

• High-speed switching: tf = 25 ns (typ.)

Maximum Ratings (Ta

= 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

50

V

Collector-emitter voltage

VCEX

50

V

Collector-emitter voltage

VCEO

30

V

Emitter-base voltage

VEBO

6

V

DC

IC

3.0

Collector current

Pulse

ICP

5.0

A

Base current

IB

0.3

A

Collector power dissipation (t=10s)

1.00

Total collector power dissipation (DC)

PC (Note.1)

0.625

W

Junction temperature

Tj

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

2)

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2－3S1A

1.6-0.1

2.8-0.3

3

2

1

+0.2

1.Base

2.Emitter

3.Collector

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