Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2506DF

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. Typical DC current gain. h

parameter V

CE

Fig.5. Typical base-emitter saturation voltage.

V

Fig.6. Typical collector-emitter saturation voltage.

V

IC

IB

VCE

ICsat

IBend

64us

26us

20us

t

t

t

TRANSISTOR

DIODE

0.01

1

100

10

1

10

0.1

Tj = 25 C

Tj = 125 C

IC / A

5V

1V

ICsat

90 %

10 %

tf

ts

IBend

IC

IB

t

t

- IBM

0.1

1

10

1.2

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

VBESAT / V

IC / A

IC/IB =

3

4

5

+ 150 v nominal

adjust for ICsat

Lc

Cfb

D.U.T.

LB

IBend

-VBB

Rbe

0.1

1

10

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

Tj = 25 C

Tj = 125 C

VCESAT / V

IC / A

IC/IB =

5

4

3

September 1997

3

Rev 1.400