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SLE4440C 데이터시트(PDF) 3 Page - Siemens Semiconductor Group |
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SLE4440C 데이터시트(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 14 page ![]() SLE 4432 SLE 4442 SLE 4440 SLE 4441 Semiconductor Group 3 Data Sheet Extension 09.98 Intelligent 256-Byte EEPROM with Write Protect Function SLE 4432 Intelligent 256-Byte EEPROM with Write Protect Function SLE 4442 and Programmable Security Code (PSC) Features • 256 x 8-bit EEPROM organization • Byte-wise addressing • Irreversible byte-wise protection of lowest 32 addresses (Byte 0...31) • 32 x 1-bit organization of protection memory • Two-wire link protocol • End of processing indicated at data output • Ambient temperature T A -35... +80°C • Supply voltage 5 V −5 / +10 % • Supply current < 10 mA • EEPROM programming time 5 ms • ESD protection typical 4000 V • Endurance minimum 105 write/erase cycles / bit1) • Data retention for minimum of 10 years1) • Contact configuration and Answer-to-Reset (synchronous transmission) in accordance to ISO standard 7816 Additional Feature of SLE 4442 • Data can only be changed after entry of the correct 3-byte programmable security code Type Ordering Code Package SLE 4432 M3 on request Wire-Bonded Module M3 SLE 4432 C on request Chip SLE 4442 M3 on request Wire-Bonded Module M3 SLE 4442 C on request Chip 1) Values are temperature dependent, for further information please refer to your Siemens Sales Office. M3 |
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