Philips Semiconductors

Product specification

N-channel TrenchMOS

 transistor

BSS123

Logic level FET

FEATURES

SYMBOL

QUICK REFERENCE DATA

• ’Trench’ technology

• Extremely fast switching

V

DSS = 100 V

• Logic level compatible

• Subminiature surface mounting

I

D = 150 mA

package

R

DS(ON) ≤ 6 Ω (VGS = 10 V)

GENERAL DESCRIPTION

PINNING

SOT23

N-channel

enhancement

mode

PIN

DESCRIPTION

field-effect transistor in a plastic

envelope

using

’trench’

1

gate

technology.

2

source

Applications:-

• Relay driver

3

drain

• High-speed line driver

• Telephone ringer

The BSS123 is supplied in the

SOT23

subminiature

surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DSS

Drain-source voltage

T

j = 25 ˚C to 150˚C

-

100

V

V

DGR

Drain-gate voltage

T

j = 25 ˚C to 150˚C; RGS = 20 kΩ

-

100

V

V

GS

Gate-source voltage

-

± 20

V

I

D

Continuous drain current

T

a = 25 ˚C

-

150

mA

I

DM

Pulsed drain current

T

a = 25 ˚C

-

600

mA

P

D

Total power dissipation

T

a = 25 ˚C

-

0.25

W

T

j, Tstg

Operating junction and

- 55

150

˚C

storage temperature

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-a

Thermal resistance junction

surface mounted on FR4 board

500

-

K/W

to ambient

d

g

s

1

2

3

Top view

August 2000

1

Rev 1.000