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ST72344 데이터시트(PDF) 163 Page - STMicroelectronics |
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ST72344 데이터시트(HTML) 163 Page - STMicroelectronics |
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163 / 191 page ![]() ST72340, ST72344, ST72345 163/191 13.8 MEMORY CHARACTERISTICS TA = -40°C to 85°C, unless otherwise specified 13.8.1 RAM and Hardware Registers 13.8.2 FLASH Program Memory 13.8.3 EEPROM Data Memory Notes: 1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg- isters (only in HALT mode). Guaranteed by construction, not tested in production. 2. Up to 32 bytes can be programmed at a time. 3. The data retention time increases when the TA decreases. 4. Data based on reliability test results and monitored in production. 5. Data based on characterization results, not tested in production. 6. Guaranteed by Design. Not tested in production. 7. Design target value pending full product characterization. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 1.6 V Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for Flash write/erase Refer to operating range of VDD with TA, Section 13.3.1 on page 154 2.7 5.5 V tprog Programming time for 1~32 bytes 2) TA=−40 to +85°C 5 10 ms tRET Data retention 4) TA=+55°C 3) 20 years NRW Write erase cycles TA=+25°C 10K 7) cycles IDD Supply current 6) Read / Write / Erase modes fCPU = 8MHz, VDD = 5.5V 2.6 mA No Read/No Write Mode 100 µA Power down mode / HALT 0 0.1 µA Symbol Parameter Conditions Min Typ Max Unit VDD Operating voltage for EEPROM write/erase Refer to operating range of VDD with TA, Section 13.3.1 on page 154 2.7 5.5 V tprog Programming time for 1~32 bytes TA=−40 to +85°C 5 10 ms tret Data retention 4) TA=+55°C 3) 20 years NRW Write erase cycles TA=+25°C 300K 7) cycles |
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