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ST72344 데이터시트(PDF) 163 Page - STMicroelectronics

부품명 ST72344
상세설명  8-BIT MCU WITH UP TO 16K FLASH MEMORY, 10-BIT ADC, TWO 16-BIT TIMERS, TWO I2C, SPI, SCI
PDF  191 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ST72344 데이터시트(HTML) 163 Page - STMicroelectronics

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13.8 MEMORY CHARACTERISTICS
TA = -40°C to 85°C, unless otherwise specified
13.8.1 RAM and Hardware Registers
13.8.2 FLASH Program Memory
13.8.3 EEPROM Data Memory
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
7. Design target value pending full product characterization.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode 1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
Refer to operating range of
VDD with TA, Section 13.3.1
on page 154
2.7
5.5
V
tprog
Programming time for 1~32 bytes 2)
TA=−40 to +85°C
5
10
ms
tRET
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
10K 7)
cycles
IDD
Supply current 6)
Read / Write / Erase modes
fCPU = 8MHz, VDD = 5.5V
2.6
mA
No Read/No Write Mode
100
µA
Power down mode / HALT
0
0.1
µA
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
Refer to operating range of VDD with
TA, Section 13.3.1 on page 154
2.7
5.5
V
tprog
Programming time for 1~32
bytes
TA=−40 to +85°C
5
10
ms
tret
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
300K 7)
cycles



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